RIR Power Electronics Ltd in collaboration with Silicon University, Odisha, has achieved a significant research milestone with two joint technical papers being accepted for presentation at the IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026, scheduled to be held in Cincinnati, Ohio, USA. The recognition highlights the growing impact of the industry-academia partnership in advancing next-generation silicon carbide (SiC) semiconductor technologies and high-voltage power electronics.
The selected research papers focus on critical areas including switching efficiency, thermal management, compact system architecture and high-voltage semiconductor device performance. The work is aimed at addressing the increasing demand for advanced power electronics solutions across electric mobility, renewable energy, industrial automation and modern power infrastructure.
The first paper presents an analytical and simulation-based comparison between silicon carbide (SiC) MOSFETs and conventional silicon IGBT traction inverter topologies. Using a 33 kW Permanent Magnet Synchronous Motor (PMSM) drive model, the study demonstrates that 3.3 kV SiC MOSFET technology delivers improved electrical efficiency, superior thermal performance and enhanced operational reliability. The findings highlight the potential of silicon carbide devices to support the next generation of electric vehicles and high-performance traction systems.
The second paper explores innovative 4H-SiC implant epitaxy MOSFET designs for high-voltage applications above 3.3 kV. Developed using Silvaco Technology Computer-Aided Design (TCAD) tools, the research evaluates design approaches that simplify manufacturing while maintaining high device performance. The study is expected to contribute to the development of more compact, reliable and efficient silicon carbide power devices for industrial and energy applications.
DrJaideep Talukdar, Vice Chancellor of Silicon University, said the selection of two joint papers at IEEE MWSCAS 2026 reflects the strength of collaborative research between academia and industry in advancing wide-bandgap semiconductor technologies and practical power electronics solutions.
DrHarshad Mehta, Non-Executive Chairman of RIR Power Electronics Ltd, said the achievement demonstrates the value of the strategic partnership between RIR Power Electronics and Silicon University. He noted that as India strengthens its semiconductor ecosystem, such collaborations will play an important role in building indigenous research capabilities and developing globally competitive silicon carbide technologies.
RIR Power Electronics continues to invest in research, design, and manufacturing capabilities aimed at addressing complex industrial and strategic requirements. The company’s work in high-power semiconductor devices is aligned with India’s long-term objective of building self-sufficient, technology-driven industries capable of competing globally.
