Microchip Technology has announced the launch of its new 3.3 kV HV D3 mSiC® Power Modules, developed to support the growing adoption of solid-state transformer technology in AI hyperscale data centers and other high-voltage power applications. The newly introduced modules are designed to improve power efficiency, simplify power conversion architecture and enhance thermal performance in next-generation computing infrastructure.
The new power modules integrate 3.3 kV silicon carbide (SiC) mSiC MOSFETs and Schottky diodes into an industry-standard 62 mm package, enabling efficient medium-voltage power delivery directly to server racks. As artificial intelligence workloads continue to expand rapidly, data center operators are facing increasing pressure to deliver higher computing performance while maintaining energy efficiency and optimizing infrastructure costs.
Conventional power architectures based on low-frequency transformers often introduce additional conversion stages, resulting in higher power losses, larger footprints and reduced operational flexibility. Solid-state transformers are emerging as a more efficient alternative by enabling direct regulated DC power delivery from medium-voltage grids with fewer conversion stages and improved system efficiency.
Microchip’s HV D3 mSiC modules have been engineered to address these evolving requirements. The devices utilize the company’s silicon carbide MOSFET technology, designed to deliver stable RDS(on) performance across varying temperatures. The modules feature packaging with 6 kV isolation capability, CTI 600-rated materials and extended creepage distances to support safe high-voltage operation and reliable series connections.
To improve thermal management and power density, the modules incorporate a silicon nitride substrate that enhances thermal conductivity and strengthens power cycling capability. This allows system designers to achieve higher operational efficiency while reducing cooling requirements in high-performance environments such as AI data centers.
According to the company, the 3.3 kV modules can significantly reduce the number of series-connected devices required in systems interfacing with 13.8 kV and 34.5 kV power grids when compared with lower-voltage silicon carbide alternatives. The product range also addresses an important gap in the industrial market for applications operating within the 100–300A range.
The HV D3 mSiC modules are available in both half-bridge and common-source configurations, with options that include or exclude anti-parallel Schottky diodes. The devices are designed to support both hard-switched and soft-switched topologies, making them suitable for a wide range of high-frequency and high-voltage applications.
In addition to AI data centers, the modules are intended for use in megawatt charging infrastructure, rail transportation systems, industrial motor drives, defense applications and other demanding power conversion environments requiring high efficiency and thermal reliability.
Microchip Technology is widely recognized for its semiconductor, embedded systems, and timing solutions used across automotive, industrial, aerospace, communications, and consumer electronics applications. Through ongoing innovation in frequency control and precision timing technologies, the company aims to support next-generation electronic systems that demand higher performance, lower power consumption, and improved operational resilience.
