STMicroelectronics has announced the expansion of its STPOWER portfolio with a new family of 700V gallium nitride (GaN) power semiconductors designed to improve energy efficiency and power density across high-demand applications including AI servers, robotics, industrial systems, smart-grid infrastructure, and advanced consumer electronics. The latest PowerGaN devices have been developed to address rising energy requirements in modern computing and industrial applications, particularly as artificial intelligence infrastructure and high-performance power conversion systems continue to scale beyond the capabilities of traditional silicon-based technologies.
Engineered for 700V operation, the new devices deliver high efficiency and reliable performance in high-voltage power supplies while supporting advanced high-frequency switching topologies. Their GaN-based architecture significantly reduces conduction losses and switching losses, enabling more compact, lightweight, and thermally efficient system designs.
Mario Aleo, Executive Vice President of the Power & Discrete Sub-Group at STMicroelectronics, said the expanded portfolio strengthens the company’s commitment to next-generation power technologies. “The new 700V devices extend the advantages of gallium nitride technology into medium and high-power applications. They are designed to support emerging requirements across AI servers, industrial systems, robotics, and advanced consumer applications where efficiency and power density are becoming increasingly critical,” he said.
The newly introduced enhancement-mode high electron mobility transistors (HEMTs) cover continuous current ratings ranging from 6A to 29A with RDS(on) values from 53 mΩ to 270 mΩ. The devices also feature low internal capacitances and reduced gate charge, supporting high-frequency operation and improved overall efficiency compared to conventional silicon alternatives.
According to the company, the devices can directly replace traditional MOSFETs in existing power conversion circuits or enable new high-frequency power architectures. Operating at elevated switching frequencies also reduces the size of magnetic components and passive elements, contributing to higher power density and more compact system layouts.
The devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages and are compatible with major electronic design automation platforms. Selected variants also include Kelvin source connections to improve noise immunity, protect gate drivers, and maintain precise switching performance. STMicroelectronics stated that the new PowerGaN solutions are qualified to the company’s reliability standards and are designed to support future requirements in electrification, energy management, and cloud-connected intelligent systems.
With approximately 49,000 employees worldwide, STMicroelectronics develops semiconductor technologies for mobility, industrial automation, energy management, and connected devices. The company continues to advance sustainability goals, including its target of achieving carbon neutrality across key operational areas and sourcing 100 percent renewable electricity by the end of 2027.
