onsemi is advancing its packaging techniques to meet the industry’s increasing demand for higher power density. By optimizing silicon carbide cell structures, the company aims to push more current through smaller areas, thereby enhancing power density. This, combined with their advanced packaging methods, allows onsemi to maximize performance while reducing package size.
Drawing on Moore’s Law, onsemi is developing multiple generations of silicon carbide technology simultaneously, accelerating their roadmap to introduce new EliteSiC products by 2030. “We are driving innovation forward by significantly increasing power density in our silicon carbide technology roadmap through 2030 to meet the rising energy demands and support the global shift to electrification,” said Dr. Mrinal Das, senior director of technical marketing, Power Solutions Group, onsemi.
The new EliteSiC M3e MOSFETs will enhance the performance and reliability of next-generation electrical systems at a lower cost per kW. They operate at higher switching frequencies and voltages while reducing power conversion losses, making them ideal for automotive and industrial applications like electric vehicle powertrains, DC fast chargers, solar inverters, and energy storage solutions. Additionally, these MOSFETs will support the development of more efficient, higher-power data centers essential for powering sustainable artificial intelligence engines.
Trusted Platform Delivers Efficiency Leap
Onsemi’s EliteSiC M3e MOSFETs offer a significant reduction in conduction and switching losses, leveraging the company’s unique design and manufacturing capabilities. Compared to earlier versions, this platform cuts conduction losses by 30% and turn-off losses by up to 50%. This technology ensures robust performance and stability, making it ideal for critical electrification applications.
The EliteSiC M3e MOSFETs also feature the industry’s lowest specific on-resistance (RSP) and short circuit capability, crucial for the traction inverter market. Packaged in onsemi’s advanced discrete and power modules, the 1200V M3e die provides about 20% more output power in the same traction inverter housing or allows for a fixed power level with 20% less SiC content, reducing costs and enabling the design of smaller, lighter, and more reliable systems.
Additionally, onsemi offers a wide range of intelligent power technologies, including gate drivers, DC-DC converters, and e-Fuses, that work seamlessly with the EliteSiC M3e platform. This combination of optimized, co-engineered power switches, drivers, and controllers allows for advanced features and lowers overall system costs.
Accelerating the Future of Power
As global energy demands are set to rise over the next decade, increasing power density in semiconductors is crucial. Onsemi is leading the way with its silicon carbide innovations, from die architectures to novel packaging techniques, to meet the industry’s need for higher power density.
By optimizing cell structures to push more current through smaller areas and using advanced packaging techniques, onsemi aims to maximize performance and reduce package size. Applying the principles of Moore’s Law, onsemi is accelerating its silicon carbide development to bring multiple new EliteSiC products to market quickly through 2030.
The EliteSiC M3e MOSFET in the industry-standard TO-247-4L package is now available for sampling. onsemi, a Nasdaq-100 and S&P 500 company, focuses on automotive and industrial markets, driving innovations in vehicle electrification, sustainable energy, industrial automation, and 5G infrastructure. They offer a diverse and innovative product portfolio aimed at solving complex global challenges and creating a safer, cleaner, and smarter world.