Toshiba Electronic Devices & Storage Corporation has launched three new 650V silicon carbide (SiC) MOSFETs featuring its latest 3rd-generation SiC chips in a compact surface-mount TOLL package. The devices — “TW027U65C,” “TW048U65C,” and “TW083U65C” — are designed for industrial applications, including switched-mode power supplies and photovoltaic power conditioners. Volume shipments begin today.
The new MOSFETs reduce device size by more than 80% compared to traditional through-hole packages such as TO-247 and TO-247-4L(X), enabling higher power density in equipment. The TOLL package also lowers parasitic impedance, helping minimize switching losses and improve system efficiency.
As a 4-terminal package, the design supports Kelvin connections for gate drive signals, reducing the impact of source inductance within the package. This enables faster switching performance. For example, the TW048U65C achieves approximately 55% lower turn-on loss and 25% lower turn-off loss compared to existing Toshiba devices, contributing to reduced overall power loss in equipment. Toshiba plans to expand its SiC MOSFET lineup further, supporting advancements in equipment efficiency and power capability across multiple industries.
With decades of expertise in semiconductors and storage solutions, Toshiba provides discrete devices, system LSIs, and HDD products to customers worldwide. Backed by 19,400 employees, the company is committed to innovation, customer collaboration, and delivering solutions that contribute to more efficient and sustainable technologies.
Toshiba Electronic Devices & Storage Corporation is a global provider of advanced semiconductors and storage solutions, offering discrete devices, system LSIs, and hard disk drives. With over 19,000 employees worldwide, the company is committed to delivering high-value products and fostering close collaboration with partners to drive innovation and create new markets, contributing to a sustainable future.
