Toshiba Electronic Devices & Storage Corporation has started shipping test samples of its new 1200V trench-gate silicon carbide (SiC) MOSFET, developed to support higher efficiency power supply systems for next-generation AI data centers and renewable energy applications. The new device, named TW007D120E, has been designed to address the rapidly growing power consumption demands created by generative AI and high-performance computing infrastructure. As data centers continue adopting high-power AI servers and 800V high-voltage direct current (HVDC) architectures, demand is increasing for compact, energy-efficient and high-density power conversion systems.
Toshiba’s latest SiC MOSFET uses the company’s proprietary trench-gate structure technology, enabling industry-leading low on-resistance per unit area. This helps significantly reduce conduction losses while also lowering switching losses, resulting in improved operational efficiency and reduced heat generation.
Compared with Toshiba’s existing third-generation SiC MOSFET products, the new TW007D120E achieves approximately 58% lower on-resistance per unit area and improves the figure of merit associated with conduction and switching performance by nearly 52%. These enhancements are expected to contribute to improved energy efficiency and thermal performance in advanced data center power systems.
The device is housed in a QDPAK package supporting top-side cooling, an important feature for high-density power applications where effective thermal management is critical. The package design allows for improved heat dissipation and supports compact system integration for modern power conversion environments.
Toshiba stated that the new product will play a key role in improving efficiency across multiple industrial applications, including AI data center power supplies, photovoltaic inverters, uninterruptible power supplies, EV charging infrastructure, energy storage systems and industrial motor applications. The TW007D120E also supports low gate drive voltage operation between 15V and 18V, helping simplify power system design while improving energy efficiency and operational reliability.
The development of the new SiC MOSFET is based on results obtained through the JPNP21029 project supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO). Toshiba plans to begin mass production of the device during fiscal year 2026 while continuing to expand its silicon carbide semiconductor portfolio for industrial and automotive applications. The company said the new semiconductor technology will contribute to lower power consumption, improved system efficiency and reduced carbon emissions across next-generation data centers and industrial infrastructure.
Toshiba Electronic Devices & Storage Corporation is a global provider of advanced semiconductors and storage solutions, offering discrete devices, system LSIs, and hard disk drives. With over 19,000 employees worldwide, the company is committed to delivering high-value products and fostering close collaboration with partners to drive innovation and create new markets, contributing to a sustainable future.
