The Electronics & Information Technology Department, Government of Odisha, has approved financial assistance for Phase 1 of RIR Power Electronics Limited’s Silicon Carbide (SiC) semiconductor manufacturing project. The facility is located in Bhubaneswar and is the first of its kind in the state.
The Odisha Computer Application Center (OCAC), the department’s nodal agency, has issued formal notification for pro-rata disbursement of capital subsidy as part of the agreement. The project had previously received approval from the State-Level Single Window Clearance Committee (SLSWCC) and the state cabinet during the last fiscal year.
The project, which spans two development phases, is estimated to require a total investment of approximately ₹618 crore. In the first phase alone, around ₹65 crore has already been allocated as capital expenditure. Additionally, the project is eligible for a capital subsidy of roughly ₹32 crore from the respective state government, further supporting its financial foundation and industrial viability.
The upcoming facility will concentrate on manufacturing advanced high-voltage power semiconductor components. These include Silicon Carbide (SiC) MOSFETs, Insulated Gate Bipolar Transistors (IGBTs), and power diodes with voltage ratings ranging from 3.3 kV to 20 kV. Such components are essential in driving the performance and efficiency of next-generation power systems.
These high-voltage semiconductors serve as the backbone of several critical and rapidly expanding sectors. Key applications include electric vehicles (EVs), renewable energy systems such as solar and wind power, robust power grid infrastructure, industrial automation, and modern power electronics. Their deployment ensures enhanced operational reliability, energy efficiency, and performance.
SiC-based devices, in particular, offer a significant technological edge over traditional silicon-based alternatives. They exhibit improved thermal conductivity, higher breakdown voltage, and lower energy losses, making them ideal for demanding environments. This marks a pivotal advancement in component design and application potential, especially in energy-intensive industries.
By establishing this manufacturing hub, the project aims to boost India’s self-reliance in the power electronics space. It supports the country’s broader push towards indigenization of semiconductor technology, aligning with national goals for technological sovereignty and reducing dependency on foreign imports for high-performance semiconductor components.
Dr.Harshad Mehta, Chairman & Director, commented “We appreciate the Government of Odisha’s decision to support this project. This approval represents a step forward in establishing local manufacturing capacity for advanced semiconductor technologies. The facility will play an important role in strengthening India’s position in clean energy systems and high-efficiency electronics.”
RIR Power Electronics Limited develops high-power semiconductor solutions used in industrial, energy, and transportation systems. The company manufactures a range of devices and energy management assemblies aimed at improving the efficiency and reliability of electrical infrastructure. With a focus on engineering innovation and application-specific design, RIR supports the modernization of power systems both in India and globally.
