Infineon Technologies AG, a leading global semiconductor company specializing in power systems and IoT solutions, has introduced pioneering advancements in space-grade memory technology with the launch of the industry’s first radiation-hardened (rad hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. This breakthrough marks a significant milestone in the realm of space-based applications, where reliability and durability are paramount.
The newly unveiled F-RAM devices, announced today by Infineon, offer unparalleled reliability and endurance, boasting up to 120 years of data retention at temperatures as high as 85 degrees Celsius. Designed to operate with random access and full memory write capabilities at bus speeds, these devices represent a critical evolution from slower, less robust EEPROM nonvolatile storage solutions historically used in space missions.
“Infineon’s expansion into radiation-hardened parallel interface F-RAMs underscores our commitment to advancing space technology with cutting-edge memory solutions,” stated Helmut Puchner, Vice President and Fellow Aerospace and Defense at Infineon Technologies. “As space applications increasingly demand on-system data processing capabilities, our rad hard F-RAMs are poised to meet these evolving needs by ensuring high reliability and data integrity under the most extreme conditions.”
The deployment of Infineon’s F-RAM devices in space-based systems is set to revolutionize data storage across various applications, including data logging for calibration data, secure key storage for data encryption, and boot code storage. These devices are engineered to operate within military standard temperature grades ranging from -55°C to 125°C, ensuring robust performance across a wide spectrum of environmental conditions.
Unlike conventional EEPROM technologies, Infineon’s parallel interface F-RAMs leverage a unique chemical composition that facilitates instantaneous switching of atomic states, enhancing data security and operational efficiency. Moreover, F-RAM technology offers inherent immunity to soft errors, magnetic fields, and radiation effects, eliminating the need for software management of page boundaries and ensuring near-infinite endurance with 10^13 write cycles.
The newly introduced devices are packaged in a 44-lead ceramic TSOP format and are fully QML-V qualified, exhibiting superior radiation performance metrics including Total Ionizing Dose (TID) resistance exceeding 150 Krad (Si), Single Event Latch-up (SEL) tolerance exceeding 96 MeV•cm^2/mg at 115°C, and immunity to Single Event Upset (SEU) and Single Event Functional Interrupt (SEFI) at active, standby, and sleep modes.
Infineon’s complete portfolio of rad hard F-RAM non-volatile memories, comprising 2 Mb SPI and 1 and 2 Mb parallel devices, is now commercially available, further consolidating its position as a leader in high-reliability semiconductor solutions for aerospace and defense applications.
Infineon Technologies AG is a global leader in semiconductor solutions for power systems and IoT applications, driving decarbonization and digitalization with innovative products and solutions. With approximately 58,600 employees worldwide, Infineon generated revenue of €16.3 billion in the 2023 fiscal year. The company is listed on the Frankfurt Stock Exchange under the ticker symbol IFX and trades on the OTCQX International market in the USA under the ticker symbol IFNNY.
