RIR Power Electronics Limited (BSE: 517035; NSE: RIR) has completed the erection and installation of Silicon Carbide (SiC) epitaxial wafer manufacturing reactors at its semiconductor facility in Bhubaneswar, Odisha. The milestone advances the company’s plans to establish what it describes as India’s first vertically integrated SiC semiconductor production facility.
The readiness of the facility was witnessed on September 16 by Vishal Dev, Additional Chief Secretary, Government of Odisha, along with senior government officials. The company said the key equipment required for the SiC epitaxial wafer manufacturing process has been installed, while essential power connections, utilities and supporting infrastructure have also been commissioned.
Vishal Dev, Additional Chief Secretary, Government of Odisha, said, “This milestone reflects Odisha’s growing role in India’s semiconductor ambitions and is fully aligned with the Hon’ble Prime Minister’s vision of Viksit Bharat. We are proud that RIR Power Electronics has chosen Odisha to build India’s first vertically integrated SiC semiconductor facility, and the State Government remains committed to supporting every step of this journey towards a self-reliant, technologically advanced India.”
Commercial production at the facility is expected to begin after completion of the remaining statutory and regulatory formalities. The company plans to manufacture SiC epitaxial wafers for domestic and international markets as part of its phased development of the Odisha semiconductor facility.
The SiC epitaxial manufacturing reactors and associated infrastructure form part of RIR Power Electronics’ planned ₹618 crore investment to establish a vertically integrated SiC semiconductor manufacturing ecosystem. The facility is being developed with the objective of manufacturing advanced SiC-based power semiconductor devices, including high-power MOSFETs, diodes and modules, for applications across several strategic and high-growth sectors.
Silicon Carbide technology offers advantages over conventional silicon-based semiconductor technologies, including higher energy efficiency, improved power handling, lower power losses, higher operating temperatures and enhanced switching performance. These characteristics make SiC devices increasingly relevant to electric mobility, renewable energy, energy storage, railways, aerospace, defence, data centres, industrial power electronics and automation.
The company’s development strategy follows its “Silicon Carbide to System” approach, under which the SiC epitaxial process represents the foundational stage of an integrated semiconductor value chain. The planned progression extends from epitaxial wafer manufacturing to power semiconductor devices and ultimately to system-level solutions.
RIR Power Electronics said the facility is intended to strengthen India’s domestic semiconductor manufacturing capabilities while supporting the “Make in India” and “Atmanirbhar Bharat” initiatives. The investment is also expected to contribute to Odisha’s development as a semiconductor manufacturing hub by creating advanced capabilities that can support downstream applications across industrial and strategic sectors.
RIR Power Electronics is a manufacturer of high-power semiconductor devices, assemblies and energy management systems. Its portfolio serves evolving requirements across modern energy systems, with products and solutions focused on energy performance, reliability and efficiency.
